Development of Silicon Carbide Semiconductor Devices for High Temperature Applications

The semiconducting properties of electronic grade silicon carbide (SiC) crystals, such as its wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices have been fabricated and tested at elevated temperatures. Grown p-n junction diodes have demonstrated very good rectification characteristics at 870 K. A depletionmode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, we believe that SiC is an enabling high temperature electronic technology.